標題: DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrate
作者: Kao, H. L.
Chin, Albert
Liao, C. C.
Tseng, Y. Y.
McAlister, S. P.
Chi, C. C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RF noise;associated gain;MOSFET;plastic
公開日期: 2006
摘要: By applying 0.7% tensile strain to the flexible die of a 0.13 mu m thin-body (40 mu m) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current I(d,sat) was 14.3% higher, and f(T) increased from 103 to 118 GHz with NF(min) decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost.
URI: http://hdl.handle.net/11536/17299
http://dx.doi.org/10.1109/MWSYM.2006.249856
ISBN: 978-0-7803-9541-1
ISSN: 0149-645X
DOI: 10.1109/MWSYM.2006.249856
期刊: 2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5
起始頁: 2043
結束頁: 2046
Appears in Collections:Conferences Paper


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