|標題:||DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrate|
|作者:||Kao, H. L.|
Liao, C. C.
Tseng, Y. Y.
McAlister, S. P.
Chi, C. C.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||RF noise;associated gain;MOSFET;plastic|
|摘要:||By applying 0.7% tensile strain to the flexible die of a 0.13 mu m thin-body (40 mu m) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current I(d,sat) was 14.3% higher, and f(T) increased from 103 to 118 GHz with NF(min) decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost.|
|期刊:||2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5|
|Appears in Collections:||Conferences Paper|
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