標題: A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
作者: CHENG, JY
LEI, TF
CHAO, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-1995
摘要: The planarization of trench isolation refilled by deposition oi polysilicon was investigated. Results show that the planarization by RIE etching has poor surface planarity. On the other hand, an excellent surface planarity can be achieved by the CMP process resulting from the high etching selectivity of polysilicon to nitride. This simple process provides a very promising candidate for trench isolation.
URI: http://dx.doi.org/10.1149/1.2050039
http://hdl.handle.net/11536/1727
ISSN: 0013-4651
DOI: 10.1149/1.2050039
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 142
Issue: 10
起始頁: L187
結束頁: L188
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RZ32800008.pdf