Title: AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGS
Authors: YEH, WK
TSAI, MH
CHEN, SH
CHEN, MC
WANG, PJ
LIU, LM
LIN, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Oct-1995
Abstract: Preclean of aluminum trench and via patterned substrates is vital for successful selective chemical vapor deposition of tungsten (CVD-W). A convenient preclean method uses in situ. BCl3 plasma etching to remove the native metal oxide prior to conducting the CVD-W. During the plasma etching, however, the outsputtered aluminum oxide and aluminum can be redeposited on the sidewall of the trench and via hole and on the surface of the dielectric layer, where W nucleation is induced, resulting in creep-up and selectivity loss during tungsten deposition. By using a solution of hydroxylamine sulfate to pretreat the aluminum trench and via hole patterned substrates, we successfully avoid the creep-up and selectivity loss of W deposition.
URI: http://hdl.handle.net/11536/1726
ISSN: 0013-4651
Journal: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 142
Issue: 10
Begin Page: 3584
End Page: 3588
Appears in Collections:Articles


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  1. A1995RZ32800075.pdf