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dc.contributor.authorYEH, CFen_US
dc.contributor.authorCHEN, CLen_US
dc.date.accessioned2014-12-08T15:03:10Z-
dc.date.available2014-12-08T15:03:10Z-
dc.date.issued1995-10-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/1725-
dc.description.abstractSilicon oxide (SiO2-xFx) with fluorine naturally incorporated can be prepared by the liquid-phase deposition (LPD) method at 15 degrees C. The fluorine is uniformly distributed in the bulk of the LPD oxide. The fluorine incorporation as well as the qualitative properties can be accurately controlled by varying the amount of H2O added. A high temperature process has considerable effect on the low temperature fluorinated oxide. FTIR and XPS spectra show that Si-F and SiO-H bonds can restructure with densification at higher thermal annealing temperature, and that restructuring is a function of temperature. Film densification with increasing temperature is also discussed in terms of Si-O-Si bond angle and Si-Si bond length.en_US
dc.language.isoen_USen_US
dc.titleCONTROLLING FLUORINE CONCENTRATION AND THERMAL ANNEALING EFFECT ON LIQUID-PHASE DEPOSITED SIO2-XFX FILMSen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume142en_US
dc.citation.issue10en_US
dc.citation.spage3579en_US
dc.citation.epage3583en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RZ32800074-
dc.citation.woscount17-
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