標題: CONTROLLING FLUORINE CONCENTRATION AND THERMAL ANNEALING EFFECT ON LIQUID-PHASE DEPOSITED SIO2-XFX FILMS
作者: YEH, CF
CHEN, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-1995
摘要: Silicon oxide (SiO2-xFx) with fluorine naturally incorporated can be prepared by the liquid-phase deposition (LPD) method at 15 degrees C. The fluorine is uniformly distributed in the bulk of the LPD oxide. The fluorine incorporation as well as the qualitative properties can be accurately controlled by varying the amount of H2O added. A high temperature process has considerable effect on the low temperature fluorinated oxide. FTIR and XPS spectra show that Si-F and SiO-H bonds can restructure with densification at higher thermal annealing temperature, and that restructuring is a function of temperature. Film densification with increasing temperature is also discussed in terms of Si-O-Si bond angle and Si-Si bond length.
URI: http://hdl.handle.net/11536/1725
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 142
Issue: 10
起始頁: 3579
結束頁: 3583
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RZ32800074.pdf