標題: RAMAN-SCATTERING OF SE-DOPED GALLIUM NITRIDE FILMS
作者: KUO, HR
FENG, MS
GUO, JD
LEE, MC
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: RAMAN SCATTERING;GALLIUM NITRIDE;RESONANCE EFFECT
公開日期: 1-十月-1995
摘要: Raman spectra of Se-doped gallium nitride films have been measured for the first time with good resolution and a wide range of excitation wavelengths. The signals from both buffer layer and epilayer are identified unambiguously. We have observed not only the resonant scattering related to the transition below the band gap but also the phonon-plasmon coupling due to the doping effect. The carrier concentration obtained from lineshape fitting is consistent with that from Hall measurements. By comparing the Raman shifts with those of other nitrides and gallium compounds, we found that most of them are almost linearly proportional to the square root of reciprocal masses. The bonding strengths are thus inferred from the slopes.
URI: http://hdl.handle.net/11536/1722
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 10
起始頁: 5628
結束頁: 5632
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TF79500028.pdf