標題: MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES
作者: CHENG, KL
CHENG, HC
LIU, CC
LEE, C
YEW, TR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SILICON CARBIDE;LOW TEMPERATURE;STOICHIOMETRY;PLASMON LOSS PEAK;SURFACE MORPHOLOGY;ATOMIC FORCE MICROSCOPY
公開日期: 1-十月-1995
摘要: The characteristics of microcrystalline silicon carbide (mu c-SiC) films deposited using an electron cyclotron resonance chemical vapor deposition system at low temperatures have been investigated. The effect of microwave (MW) power on the SiC crystallinity is studied. According to the results of Fourier transform infrared absorption spectra, plan-view transmission electron microscopy, and the plasmon loss peaks in X-ray photoelectron spectroscopy, Si-C bonds form when the MW power is above 500 W for deposition at 500 degrees C. The SiC crystallinity improves monotonically with MW power. The amount of incorporated carbon atoms in the grown films increases with MW power up to the concentration of 50% at 1500 W. The dependence of the surface morphology and the mean roughness of the films on MW power is examined using the contact mode atomic force microscopy.
URI: http://hdl.handle.net/11536/1721
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 10
起始頁: 5527
結束頁: 5532
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TF79500008.pdf