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dc.contributor.authorTseng, S. C.en_US
dc.contributor.authorMeng, C. C.en_US
dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorHuang, G. W.en_US
dc.date.accessioned2014-12-08T15:24:44Z-
dc.date.available2014-12-08T15:24:44Z-
dc.date.issued2006en_US
dc.identifier.isbn978-2-9600551-8-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/17189-
dc.identifier.urihttp://dx.doi.org/10.1109/EMICC.2006.282776en_US
dc.description.abstractThis paper demonstrates a 4-GHz monolithic SiGe heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (QVCO) using superharmonic coupling topology. The quadrature VCO at 4.17 GHz has phase noise of -116 dBc/Hz at lMHz offset frequency, output power of -6 dBm and the figure of merit (FOM) -179 dBc/Hz. The core current consumption is 3.2 mA at 3V supply voltage. The die size is about 1.4 mm. x 1.2 mm.en_US
dc.language.isoen_USen_US
dc.subjectphase noiseen_US
dc.subjectquadrature voltage controlled oscillator (QVCO)en_US
dc.subjectSiGe heterojunction bipolar transistor (HBT)en_US
dc.subjecttransformeren_US
dc.subjectsuperharmonic couplingen_US
dc.title4-GHz fully monolithic SiGe HBT QVCO using superharmonic coupling topologyen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/EMICC.2006.282776en_US
dc.identifier.journal2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCEen_US
dc.citation.spage161en_US
dc.citation.epage164en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000247370600043-
Appears in Collections:Conferences Paper


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