標題: Fabrication of low-stress dielectric thin-film for microsensor applications
作者: Chou, BCS
Shie, JS
Chen, CN
交大名義發表
光電工程學系
National Chiao Tung University
Department of Photonics
公開日期: 1-十二月-1997
摘要: A method of fabricating low-stress dielectric thin film as the supporting material of micromachined devices is reported. The film is processed by post thermal oxidation of silicon-rich nitride (SN) deposited on silicon substrate by LPCVD. Due to the compensation on the nitride by its top oxide, an ultra-low residual less than 10 MPa can be obtained with proper oxidation scheme. Characteristics of the oxidized nitride were analyzed by Auger electron spectroscopy (AES) and ellipsometry. Large floating membranes of 4 x 4 cm(2) and 400-nm thick can be made by this method with TMAH etching.
URI: http://dx.doi.org/10.1109/55.644083
http://hdl.handle.net/11536/171
ISSN: 0741-3106
DOI: 10.1109/55.644083
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 18
Issue: 12
起始頁: 599
結束頁: 601
顯示於類別:期刊論文


文件中的檔案:

  1. A1997YH55200008.pdf