標題: SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
作者: GUO, JD
FENG, MS
PAN, FM
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: GAN;LP-MOCVD;SE DOPING
公開日期: 1-十月-1995
摘要: Se-doped GaN films are grown for the first time by low-pressure metalorganic chemical vapor deposition (LP-MOCVD), in which H2Se is used as the Se source sas. Effects of Se doping on electrical properties of GaN films are reported. Se atoms tend to out-diffuse to the surface of the GaN film at high tempi rature. The N atomic percentage is influenced by the incorporation of H2Se in the MOCVD process. The carrier concentration was found to be significantly affected by the surface defects which develop at high H2Se dosages. The highest free electron concentration obtained is about 1.5 x 10(18) cm(-3). Increasing the growth temperature from 1000 degrees C to 1050 degrees C reduces the maximum carrier concentration to about 7x10(17) cm(-3).
URI: http://hdl.handle.net/11536/1707
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 10
起始頁: 5510
結束頁: 5514
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TF79500005.pdf