Title: Growth of zinc oxide thin films on Y2O3/Si substrates by chemical vapor deposition
Authors: Lin, Chih-Wei
Cheng, Tsan-Yao
Chang, Li
Juang, Jenh-Yih
Department of Electrophysics
Keywords: Characterization;Interfaces;Metal-organic chemical vapor deposition;Oxides;Semiconducting II-VI materials
Issue Date: 15-Feb-2005
Abstract: Epitaxial ZnO was deposited on Si(1 1 1) substrate by atmospheric pressure metal-organic chemical vapor deposition (MOCVD) at 500 degrees C. A Y2O3 buffer layer in epitaxy with Si substrate has successfully suppressed the Si oxidation before ZnO deposition. The Y2O3 film was grown by pulsed laser deposition (PLD) on Si(1 1 1) substrate at 800 degrees C. Also, ZnO was deposited by PLD for comparison with MOCVD. X-ray diffraction and cross-sectional transmission electron microscopy was used to characterize microstructures of the ZnO films and their interfaces with Y2O3. The result shows ZnO(0 0 0 2) parallel to Y2O3(1 1 1). With the increase of the deposition time, the grain morphology of ZnO thin films evolved from flat structure to columnar structure. Most of the columnar ZnO grains are c-axis oriented perpendicular to the interface. (C) 2004 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2004.11.381
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.11.381
Volume: 275
Issue: 1-2
Begin Page: E2481
End Page: E2485
Appears in Collections:Articles

Files in This Item:

  1. 000208324600401.pdf