Title: Effect of the Annealing Ambient on the Electrical Characteristics of the Amorphous InGaZnO Thin Film Transistors
Authors: Huang, Yu-Chih
Yang, Po-Yu
Huang, Hau-Yuan
Wang, Shui-Jinn
Cheng, Huang-Chung
Department of Electronics Engineering and Institute of Electronics
Keywords: Thin-Film Transistor (TFT);Indium Gallium Zinc Oxide (IGZO);Annealing;Gate Bias Voltage Stress
Issue Date: 1-Jul-2012
Abstract: The influence of the thermal annealing on the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) under different ambient gases has been systematically addressed. The chemical bonding states and transfer characteristics of a-IGZO TFTs show evident dependence on the annealing ambient gas. For the a-IGZO TFTs in the oxygen ambient annealing at 250 degrees C for 30 mins exhibited a maximum field effect mobility (max mu(FE)) of 9.36 cm(2)/V . s, on/off current ratio of 6.12 X 10(10), and a subthreshold slope (SS) of 0.21 V/decade. Respectively, the as-deposited ones without annealing possess a max mu(FE) of 6.61 cm(2)/V . s, on/off current ratio of 4.58 x 10(8), and a SS of 0.46 V/decade. In contrast, the a-IGZO TFTs annealed at 250 degrees C for 30 mins in the nitrogen ambient would be degraded to have a max mu(FE) of 0.18 cm(2)/V . s, on/off current ratio of 2.22 X 10(4), and a SS of 7.37 V/decade, corresponding. It is attributed to the content of the oxygen vacancies, according the x-ray photoelectron spectroscopy (XPS) analyze of the three different samples.
URI: http://dx.doi.org/10.1166/jnn.2012.6307
ISSN: 1533-4880
DOI: 10.1166/jnn.2012.6307
Volume: 12
Issue: 7
Begin Page: 5625
End Page: 5630
Appears in Collections:Articles