標題: HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
作者: LIOU, BW
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SCHOTTKY DIODES;POLYSILICON
公開日期: 26-十月-1995
摘要: A new Schottky diode structure which uses the p(+)-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown voltage (148V) and a low reverse leakage current density (8.4 mu A/cm(2)).
URI: http://dx.doi.org/10.1049/el:19951315
http://hdl.handle.net/11536/1694
ISSN: 0013-5194
DOI: 10.1049/el:19951315
期刊: ELECTRONICS LETTERS
Volume: 31
Issue: 22
起始頁: 1950
結束頁: 1951
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TE33900047.pdf