Title: HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
Authors: LIOU, BW
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: SCHOTTKY DIODES;POLYSILICON
Issue Date: 26-Oct-1995
Abstract: A new Schottky diode structure which uses the p(+)-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown voltage (148V) and a low reverse leakage current density (8.4 mu A/cm(2)).
URI: http://dx.doi.org/10.1049/el:19951315
http://hdl.handle.net/11536/1694
ISSN: 0013-5194
DOI: 10.1049/el:19951315
Journal: ELECTRONICS LETTERS
Volume: 31
Issue: 22
Begin Page: 1950
End Page: 1951
Appears in Collections:Articles


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  1. A1995TE33900047.pdf