標題: Nanoindentation of GaSe thin films
作者: Jian, Sheng-Rui
Ku, Shin-An
Luo, Chih-Wei
Juang, Jenh-Yih
電子物理學系
Department of Electrophysics
關鍵字: GaSe thin films;XRD;Nanoindentation;Hardness
公開日期: 17-七月-2012
摘要: The structural and nanomechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates by pulsed laser deposition. XRD patterns reveal only the pure (000 l)-oriented reflections originating from the hexagonal GaSe phase and no trace of any impurity or additional phases. Nanoindentation results exhibit discontinuities (so-called multiple 'pop-in' events) in the loading segments of the load-displacement curves, and the continuous stiffness measurements indicate that the hardness and Young's modulus of the hexagonal GaSe films are 1.8 +/- 0.2 and 65.8 +/- 5.6 GPa, respectively.
URI: http://dx.doi.org/10.1186/1556-276X-7-403
http://hdl.handle.net/11536/16934
ISSN: 1931-7573
DOI: 10.1186/1556-276X-7-403
期刊: NANOSCALE RESEARCH LETTERS
Volume: 7
Issue: 
結束頁: 
顯示於類別:期刊論文


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