Title: Nanoindentation of GaSe thin films
Authors: Jian, Sheng-Rui
Ku, Shin-An
Luo, Chih-Wei
Juang, Jenh-Yih
Department of Electrophysics
Keywords: GaSe thin films;XRD;Nanoindentation;Hardness
Issue Date: 17-Jul-2012
Abstract: The structural and nanomechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates by pulsed laser deposition. XRD patterns reveal only the pure (000 l)-oriented reflections originating from the hexagonal GaSe phase and no trace of any impurity or additional phases. Nanoindentation results exhibit discontinuities (so-called multiple 'pop-in' events) in the loading segments of the load-displacement curves, and the continuous stiffness measurements indicate that the hardness and Young's modulus of the hexagonal GaSe films are 1.8 +/- 0.2 and 65.8 +/- 5.6 GPa, respectively.
URI: http://dx.doi.org/10.1186/1556-276X-7-403
ISSN: 1931-7573
DOI: 10.1186/1556-276X-7-403
Volume: 7
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