標題: InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10 degrees off Misoriented GaAs Substrate
作者: Yu, Hung Wei
Chung, Chen Chen
Wang, Chin Te
Hong Quan Nguyen
Binh Tinh Tran
Lin, Kung Liang
Dee, Chang Fu
Majlis, Burhanuddin Yeop
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-2012
摘要: InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is demonstrated that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J(peak)) at higher concentration ratios (185 x) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 6 degrees off GaAs substrates. Furthermore, the cell design with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates does not generate a disordered InGaP epitaxial layer during material growth, and thus shows superior current-voltage characteristics. (c) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.51.080208
http://hdl.handle.net/11536/16928
ISSN: 0021-4922
DOI: 10.1143/JJAP.51.080208
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 8
結束頁: 
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