標題: Sensitivity enhancement in SiGe-on-insulator nanowire biosensor fabricated by top surface passivation
作者: Lai, Chiung-Hui
Chang, Kow-Ming
Chen, Chu-Feng
Hsieh, Cheng-Ting
Wu, Chin-Ning
Wang, Yu-Bin
Liu, Chung-Hsien
Chang, Kuo-Chin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-2012
摘要: The oxidation caused by Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and significantly increases the hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowires. However, previous studies have found that the sensitivity of SGOI nanowires degrades when the Ge fraction exceeds 20%, because a high Ge fraction destabilises the surface state of SiGe. In this work, a top surface passivation plasma-enhanced chemical vapour deposition SiO2 layer deposited on a Si0.8Ge0.2 nanowire improved its sensitivity by similar to 1.3 times that of the nanowire sample without a top passivation layer.
URI: http://dx.doi.org/10.1049/mnl.2012.0214
http://hdl.handle.net/11536/16924
ISSN: 1750-0443
DOI: 10.1049/mnl.2012.0214
期刊: MICRO & NANO LETTERS
Volume: 7
Issue: 8
起始頁: 729
結束頁: 732
顯示於類別:期刊論文


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  1. 000308562200009.pdf