標題: Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi-modal dot height distributions
作者: Lin, Wei-Hsun
Lin, Shih-Yen
光電工程學系
Department of Photonics
公開日期: 1-Aug-2012
摘要: The influence of quantum-dot (QD) height distribution on the detection wavelengths of InGaAs-capped quantum-dot infrared photodetectors (QDIPs) is investigated. For devices with 2.8 and 2.0 mono-layer (ML) InAs coverage, 7.6 and 10.4 mu m detection wavelengths are observed. The results suggest that reduced dot height would result in a longer detection wavelength. By using 2.4 ML InAs QDs with bi-modal dot height distributions, a 6-12 mu m broadband QDIP is achieved with the combination of similar to 8 and similar to 10 mu m peak detection wavelengths contributed by the larger and smaller InAs QDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745052]
URI: http://dx.doi.org/10.1063/1.4745052
http://hdl.handle.net/11536/16923
ISSN: 0021-8979
DOI: 10.1063/1.4745052
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 112
Issue: 3
結束頁: 
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