標題: SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS
作者: CHANG, HC
LIU, HW
SU, HP
HONG, G
奈米中心
Nano Facility Center
公開日期: 1-十一月-1995
摘要: High-performance stacked storage capacitors with small effective-oxide-thickness (t(ox),(eff)) as thin as 37 Angstrom has been achieved using low-pressure-oxidized nitride films deposited on NH3-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent-dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850 degrees C.
URI: http://dx.doi.org/10.1109/55.468283
http://hdl.handle.net/11536/1691
ISSN: 0741-3106
DOI: 10.1109/55.468283
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 11
起始頁: 509
結束頁: 511
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TA68100014.pdf