標題: Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell
作者: Mondal, Somnath
Chen, Hung-Yu
Her, Jim-Long
Ko, Fu-Hsiang
Pan, Tung-Ming
生物科技學系
Department of Biological Science and Technology
公開日期: 20-八月-2012
摘要: We investigate the resistive memory switching behaviors of Yb2O3 thin films for different Ti-dopant concentrations. A higher doping concentration of 9.4% of Ti atom into Yb2O3 thin film causes the switching mechanism to change from bipolar to unipolar behavior. This is ascribed to different chemical compositions of the filament through the oxide film. The reset mechanism is associated with the annihilation of oxygen vacancies and other ionic and electronic defects within or near the interface area of oxide film for bipolar switching, while it is believed to be due to rupture of the conducting filament by local Joule heating effect for unipolar resistive switching. Furthermore, the incorporation of Ti atom into the Yb2O3 memory device exhibits improved electrical performances including low set/reset voltages and good endurance and retention characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747695]
URI: http://dx.doi.org/10.1063/1.4747695
http://hdl.handle.net/11536/16904
ISSN: 0003-6951
DOI: 10.1063/1.4747695
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 8
結束頁: 
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