標題: THINNER LIQUID-PHASE DEPOSITED OXIDE FOR POLYSILICON THIN-FILM TRANSISTORS
作者: YEH, CF
LIN, SS
FAN, CL
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-1995
摘要: To scale down the gate insulator thickness of polysilicon thin-film transistors (poly-Si TFT's), a thinner oxide is developed by liquid-phase deposition with a small quantity, of H2O added, producing a rather high-quality oxide. Poly-Si TFT with such a thin oxide reveals good performances in electric characteristics. Thus, the novel thinner oxide is a good candidate as a poly-Si TFT gate insulator in the near future.
URI: http://dx.doi.org/10.1109/55.468271
http://hdl.handle.net/11536/1690
ISSN: 0741-3106
DOI: 10.1109/55.468271
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 11
起始頁: 473
結束頁: 475
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TA68100002.pdf