標題: POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE
作者: LAI, CS
LEI, TF
LEE, CL
CHAO, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-1995
摘要: The post-polysilicon gate-process-induced degradation on the underlying gate oxide is studied. The degradation includes an increase in the electron trapping rate and a decrease in the charge-to-breakdown, Q(bd), Of the gate oxide, It is found that N2O nitrided gate oxide is more robust than O-2 gate oxide in resisting the degradation, Also, to grow a thin polyoxide on the polysilicon-gate in N2O rather than in O-2 lessens the degradation on the underlying gate oxide, It is nitrogen, which diffuses through the polysilicon gate and piles up at both polysilicon/oxide and oxide/silicon-substrate interfaces, that improves the oxide quality for the N2O process.
URI: http://dx.doi.org/10.1109/55.468270
http://hdl.handle.net/11536/1689
ISSN: 0741-3106
DOI: 10.1109/55.468270
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 11
起始頁: 470
結束頁: 472
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TA68100001.pdf