標題: Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs
作者: Chen, Shih-Hung
Lin, Yueh-Chin
Linten, Dimitri
Scholz, Mirko
Hellings, Geert
Chang, Edward Yi
Groeseneken, Guido
交大名義發表
National Chiao Tung University
關鍵字: Electrostatic discharge (ESD);GaAs pseudomorphic high-electron-mobility transistor (pHEMT);InGaP Schottky layer;transmission-line pulsing (TLP) systems
公開日期: 1-九月-2012
摘要: GaAs high-electron-mobility transistors (HEMTs) have been widely used for radio-frequency (RF) applications due to the excellent material properties. One of the essential elements of the HEMTs is the gate Schottky barrier layer. InGaP has been proposed and proven as a better Schottky barrier material for the RF performance of the GaAs HEMTs. This letter investigates the influence of the GaAs HEMTs with two different Schottky layers, which are InGaP and AlGaAs on device transient characteristics under electrostatic discharge (ESD) stress. Although InGaP presents significant advantages on improving RF performance of GaAs HEMTs, it shows inferiority in ESD robustness.
URI: http://dx.doi.org/10.1109/LED.2012.2204951
http://hdl.handle.net/11536/16881
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2204951
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 9
起始頁: 1252
結束頁: 1254
顯示於類別:期刊論文


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  1. 000308021800012.pdf