標題: Facile preparation of sol-gel-derived ultrathin and high-dielectric zirconia films for capacitor devices
作者: You, Hsin-Chiang
Chang, Chun-Ming
Liu, Tzeng-Feng
Cheng, Chih-Chia
Chang, Feng-Chih
Ko, Fu-Hsiang
材料科學與工程學系
應用化學系
Department of Materials Science and Engineering
Department of Applied Chemistry
關鍵字: Zirconia ultrathin film;Sol-gel;High dielectric material;Out-gassing contamination
公開日期: 1-十月-2012
摘要: This study successfully prepared zirconia ultrathin films from the sol-gel solution with dispersion of zirconium halide in 1-octanol solvent. The film was subjected to annealing treatments after sol-gel spin-coating, and the films of interest were evaluated. The amorphous morphology of the zirconia film was identified using high-resolution transmission electron microscopy and X-ray diffractometry. The plot of the current density with respect to the electric field demonstrates that the as-deposited film at 500 degrees C annealing exhibited an inferior leakage current, whereas 600 degrees C annealing stabilized the film with a satisfactory leakage current of 10(-8) to 10(-9) A/cm(2). The out-gassing behavior of the sol-gel-derived thin film was evaluated using a thermal desorption system, that is, atmospheric pressure ionization mass spectrometry. The dielectric constant of the film was dependent on the retention effect of the preparation solvents. The low residual solvent for the preparation of the thin film with 1-octanol solvent and 600 degrees C annealing contributed to the superior high-k property. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2012.06.079
http://hdl.handle.net/11536/16838
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2012.06.079
期刊: APPLIED SURFACE SCIENCE
Volume: 258
Issue: 24
起始頁: 10084
結束頁: 10088
顯示於類別:期刊論文


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