標題: A New Programming Scheme for the Improvement of Program Disturb Characteristics in Scaled NAND Flash Memory
作者: Shirota, Riichiro
Huang, Chen-Hao
Nagai, Shinji
Sakamoto, Yoshinori
Li, Fu-Hai
Mitiukhina, Nina
Arakawa, Hideki
電信工程研究所
Institute of Communications Engineering
關鍵字: Flash memory;Fowler-Nordheim (FN) tunneling;junction leakage (J/L);NAND cell;program disturb;select gate (SG);surface state
公開日期: 1-十月-2012
摘要: This paper investigates the new programming scheme to reduce the program disturb in the NAND Flash memory. Program disturb characteristics are determined by the unwilling electron injections in the floating gate of the unselected cells during programming. Thus, the key point to improve the program disturb characteristics is how to suppress the electron injection in the unselected cells. This requirement can be implemented by reducing the number of electrons in the unselected NAND strings prior to programming. By applying negative bias to all the word lines in the selected block, excess electrons can be removed from the channel and source/drain regions into the bit line or the source line using drift and diffusion mechanisms, and also electrons in the surface states can be recombined with accumulated holes before programming. After the pretreatment of electron reduction in the NAND string, a normal NAND program sequence follows. The advantage of the pretreatment before programming has been verified by measuring the 8-Gb NAND Flash memory with a 50-nm technology node. Significant reduction of the threshold voltage shift was observed even after the severe program disturb stress, which corresponds to around 30 times of the programming of the 2 bit/cell operation.
URI: http://dx.doi.org/10.1109/TED.2012.2208462
http://hdl.handle.net/11536/16814
ISSN: 0018-9383
DOI: 10.1109/TED.2012.2208462
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 59
Issue: 10
起始頁: 2767
結束頁: 2773
顯示於類別:期刊論文


文件中的檔案:

  1. 000309132200029.pdf