標題: Nanomechanical properties of GaSe thin films deposited on Si(111) substrates by pulsed laser deposition
作者: Jian, Sheng-Rui
Juang, Jenh-Yih
Luo, Chih-Wei
Ku, Shin-An
Wu, Kaung-Hsiung
電子物理學系
Department of Electrophysics
關鍵字: GaSe thin films;XRD;Nanoindentation;Hardness
公開日期: 25-Nov-2012
摘要: The correlations between the crystalline structure and mechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates deposited at various deposition temperatures using pulsed laser deposition (PLD). The XRD results indicate that all the GaSe thin films are pure hexagonal phase with highly (000l)-oriented characteristics. Nanoindentation results revealed apparent discontinuities (so-called multiple "pop-in" events) in the load-displacement curve, while no discontinuity was observed in the unloading segment of the load-displacement curve. The hardness and Young's modulus of GaSe thin films determined by the continuous stiffness measurements (CSM) method indicated that both mechanical parameters increased with the increasing deposition temperature with the hardness and the Young's modulus being increased from 1.2 +/- 0.1 to 1.8 +/- 0.1 GPa and from 39.6 +/- 1.2 to 68.9 +/- 2.7 GPa, respectively, as the deposition temperature was raised from 400 to 475 degrees C. These results suggest that the increased grain size might have played a prominent role in determining the mechanical properties of the PLD-derived GaSe thin films. (C) 2012 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2012.07.089
http://hdl.handle.net/11536/16786
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2012.07.089
期刊: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 542
Issue: 
起始頁: 124
結束頁: 127
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