標題: THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
作者: WANG, FS
TSAI, MJ
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-1995
摘要: The NH3 plasma passivation has been performed for the first time on the polycrystalline silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH3 plasma passivation achieve better device performances, including the off-current below 0.1 pA/mu m and the on/off current ratio higher than 10(8), and also better hot-carrier reliability as well as thermal stability than the H-2-plasma ones, These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiO2/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films.
URI: http://dx.doi.org/10.1109/55.468281
http://hdl.handle.net/11536/1678
ISSN: 0741-3106
DOI: 10.1109/55.468281
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 11
起始頁: 503
結束頁: 505
顯示於類別:期刊論文


文件中的檔案:

  1. A1995TA68100012.pdf