標題: Effects of semiconductor processing chemicals on conductivity of graphene
作者: Chen, Chung Wei
Ren, F.
Chi, Gou-Chung
Hung, S. C.
Huang, Y. P.
Kim, Jihyun
Kravchenko, Ivan
Pearton, Stephen J.
光電工程學系
Department of Photonics
公開日期: 1-七月-2012
摘要: "Graphene layers on SiO2/Si substrates were exposed to chemicals or gases commonly used in semiconductor fabrication processes, including solvents (isopropanol, acetone), acids, bases (ammonium hydroxide), UV ozone, H2O, and O-2 plasmas. The recovery of the initial graphene properties after these exposures was monitored by measuring both the layer resistance and Raman 2D peak position as a function of time in air or vacuum. Solvents and UV ozone were found to have the least affect, while oxygen plasma exposure caused an increase of resistance of more than 3 orders of magnitude. Recovery is accelerated under vacuum but changes can persist for more than 5 h. Careful design of fabrication schemes involving graphene is necessary to minimize these interactions with common processing chemicals. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4732517]"
URI: http://dx.doi.org/40602
http://hdl.handle.net/11536/16761
ISSN: 1071-1023
DOI: 40602
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 30
Issue: 4
結束頁: 
顯示於類別:期刊論文


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  1. 000306750700013.pdf