標題: Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films
作者: Kuo, C. C.
Lin, B. H.
Yang, Song
Liu, W. R.
Hsieh, W. F.
Hsu, C-H
光電工程學系
Department of Photonics
公開日期: 1-Jan-1970
摘要: "Small amount of (10 (1) over bar3)(ZnO) domains were found in the m-plane ZnO films grown on m-sapphire by pulsed laser deposition, which provide strain relaxation of the m-ZnO matrix behaving as a low strain layer. Through carefully correlating low-temperature polarized photoluminescence spectra with the x-ray diffraction peak intensity ratio of (10 (1) over bar3)(ZnO)/(10 (1) over bar0)(ZnO) of the samples grown at different temperature and after thermal treatment, we found that the broad-band emission around 3.17 eV may result from the interface defects trapped excitons at the boundaries between the (10 (1) over bar3)(ZnO) domains and the m-ZnO matrix. The more (10 (1) over bar3)(ZnO) domains in the m-ZnO layer cause the more surface boundary that makes the stronger surface-bound-exciton emission. And the a-axes of both the (10 (1) over bar3)(ZnO) domains and the m-ZnO matrix are aligned with the c-axis of the sapphire (alpha-Al2O3) substrate. The c-axis of the (10 (1) over bar3)(ZnO) domains rotates by about +/- 59 degrees against the common a-axis of the m-ZnO. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732140]"
URI: http://dx.doi.org/11901
http://hdl.handle.net/11536/16752
ISSN: 0003-6951
DOI: 11901
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 1
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000306144800014.pdf