標題: Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
作者: Ho, Szu-Han
Chang, Ting-Chang
Wu, Chi-Wei
Lo, Wen-Hung
Chen, Ching-En
Tsai, Jyun-Yu
Luo, Hung-Ping
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-1970
摘要: "This letter investigates a hump in gate current after dynamic negative bias stress (NBS) in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current flows from source/drain. The fitting of gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after dynamic NBS, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k epsilon(high-k) = Q + E-sio2 epsilon(sio2). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739525]"
URI: http://dx.doi.org/52105
http://hdl.handle.net/11536/16747
ISSN: 0003-6951
DOI: 52105
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 5
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000307676600035.pdf