標題: Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications
作者: Fan, Yang-Shun
Liu, Po-Tsun
Teng, Li-Feng
Hsu, Ching-Hui
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 1-Jan-1970
摘要: "Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 104 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742737]"
URI: http://dx.doi.org/52901
http://hdl.handle.net/11536/16745
ISSN: 0003-6951
DOI: 52901
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 5
結束頁: 
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