Title: Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin-film transistors
Authors: Liang, CW
Chiang, WC
Feng, MS
材料科學與工程學系
電控工程研究所
奈米中心
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
Nano Facility Center
Keywords: microcrystallinity;mu c-Si, H;PECVD;volume fraction;TFT;a-Si, H
Issue Date: 1-Nov-1995
Abstract: The microcrystallinity of hydrogenated amorphous silicon films deposited by the conventional radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) method and its dependence on chamber pressure are discussed. In a wide range of pressure at which the microcrystalline film can be formed, a critical pressure (500 mT) is found. Films deposited at this critical pressure possess the highest crystalline volume fraction and the smallest grain size. An ion-bombardment-assisted model is proposed to explain the experimental results. Concerning the applications of microcrystalline films to thin-film transistors (TFTs), the subthreshold swing and the field effect mobility are studied, both of which are found to be smaller than those of the hydrogenated amorphous silicon (a-Si:H) TFTs.
URI: http://hdl.handle.net/11536/1669
ISSN: 0021-4922
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 11
Begin Page: 5943
End Page: 5948
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