標題: Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps
作者: Tu, Shang-Ju
Lee, Ming-Lun
Yeh, Yu-Hsiang
Huang, Feng-Wen
Chen, Po-Cheng
Lai, Wei-Chih
Chen, Chung-Wei
Chi, Gou Chung
Sheu, Jinn-Kong
光電工程學系
Department of Photonics
關鍵字: Air gaps;lateral overgrowth;light output power (LOP);Si-implanted
公開日期: 1-Aug-2012
摘要: "In this paper, air gaps were embedded in the n-GaN layer to improve light output power of InGaN-based light-emitting diodes (LEDs). Si ions (Si+28) were implanted on the n-GaN surface, causing a lattice constant disorder. Therefore, the GaN grown on the Si-implanted areas had a lower growth rate than the implantation-free regions. Without using a dielectric thin film, lateral epitaxial overgrowth technique was used to form air gaps above the implanted regions and below the active layers of InGaN LEDs. We proposed the growth mechanisms of GaN layer on the Si-implanted GaN templates and characterized the InGaN-based LEDs with embedded air gaps array. With a 20-mA current injection, experimental results indicate that light output power (LOP) of the proposed LEDs was enhanced by 36%, compared with those of the conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/gap interfaces to increase the effective light escape cone in the LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 mu m, the Lop could be enhanced over 70%."
URI: http://hdl.handle.net/11536/16609
ISSN: 0018-9197
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 48
Issue: 8
結束頁: 1004
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