標題: In-Plane Gate Transistors With a 40-mu m-Wide Channel Width
作者: Chung, Tung-Hsun
Lin, Wei-Hsun
Chao, Yi-Kai
Chang, Shu-Wei
Lin, Shih-Yen
光電工程學系
Department of Photonics
關鍵字: In-plane gate transistors (IPGTs);2-D electron gas (2DEG)
公開日期: 1-八月-2012
摘要: An in-plane gate transistor with a GaAs/AlGaAs 2-D electron-gas channel about 40 mu m in width is investigated. The saturation region and the drain current modulation at different gate bias voltages are observed despite the wide channel. The surface-induced channel depletion is suggested as the main mechanism for the turn-off of the drain current at -10 V gate bias.
URI: http://hdl.handle.net/11536/16603
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 8
結束頁: 1129
顯示於類別:期刊論文


文件中的檔案:

  1. 000306923700011.pdf