Title: In-Plane Gate Transistors With a 40-mu m-Wide Channel Width
Authors: Chung, Tung-Hsun
Lin, Wei-Hsun
Chao, Yi-Kai
Chang, Shu-Wei
Lin, Shih-Yen
光電工程學系
Department of Photonics
Keywords: In-plane gate transistors (IPGTs);2-D electron gas (2DEG)
Issue Date: 1-Aug-2012
Abstract: An in-plane gate transistor with a GaAs/AlGaAs 2-D electron-gas channel about 40 mu m in width is investigated. The saturation region and the drain current modulation at different gate bias voltages are observed despite the wide channel. The surface-induced channel depletion is suggested as the main mechanism for the turn-off of the drain current at -10 V gate bias.
URI: http://hdl.handle.net/11536/16603
ISSN: 0741-3106
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 8
End Page: 1129
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