標題: Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate
作者: Lee, Ling
Chien, Kun-Feng
Chou, Wu-Ching
Ko, Chih-Hsin
Wu, Cheng-Hsien
Lin, You-Ru
Wan, Cheng-Tien
Wann, Clement H.
Hsu, Chao-Wei
Chen, Yung-Feng
Su, Yan-Kuin
電子物理學系
Department of Electrophysics
公開日期: 2012
摘要: The improved design of sub-micron trenches on Si(001) substrate was demonstrated for defect suppression in semi-polar selectively-grown GaN layers. Cathodoluminescence and transmission electron microscopy measurements revealed a dramatically decreased density of threading dislocations and stacking faults near the surface of the overgrown GaN layer when the trench width ranged from 500 to 1500 nm. It was observed that defects were effectively trapped inside the trench when the ratio of trench depth to the SiO2 thickness is less than 0.66. In addition, a significant reduction of intrinsic polarization electric field was achieved for the InGaN/GaN multiple quantum well on the GaN selectively grown from the Si trenches.
URI: http://hdl.handle.net/11536/16572
ISSN: 1466-8033
期刊: CRYSTENGCOMM
Volume: 14
Issue: 13
結束頁: 4486
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