標題: Single-crystalline Ge nanowires and Cu3Ge/Ge nano-heterostructures
作者: Hsu, Shan-Chun
Hsin, Cheng-Lun
Huang, Chun-Wei
Yu, Shih-Ying
Wang, Chun-Wen
Lu, Chi-Ming
Lu, Kuo-Chang
Wu, Wen-Wei
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2012
摘要: Single-crystalline germanium nanowires were synthesized via vapor-liquid-solid mechanism. The characteristics of the Ge nanowires were investigated by a transmission electron microscope to identify the [111] growth direction. The Ge nanowire-based field-effect-transistors on Si3N4 dielectrics were fabricated, showing a p-type semiconducting behavior with hole mobility of 47.03 cm(2) V-1 s(-1). The formation of Cu3Ge/Ge/Cu3Ge nanoheterostructures was demonstrated with the reaction between copper contacts and Ge nanowires by rapid thermal annealing. The diameter-dependent electrical transport property of Ge nanowires indicates that with diameters of more than 80 nm, the resistivity of Ge nanowires decreased with diameter decrease, while with diameters of less than 80 nm, it increased. With multiple annealing processes, the channel length of the Ge nanowire transistors can be successfully controlled. From electrical measurements of each annealing step, the electrical transport property was significantly improved by sequential formation of Cu3Ge contacts. The gradual formation of the germanide structure reduces Fermi level pinning effect and increases the Ohmic behavior of electrical transportation.
URI: http://hdl.handle.net/11536/16567
ISSN: 1466-8033
期刊: CRYSTENGCOMM
Volume: 14
Issue: 14
結束頁: 4570
顯示於類別:期刊論文


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