|Title:||Diffusion of Co-Sputtered Metals as Bonding Materials for 3D Interconnects During Thermal Treatments|
|Authors:||Hsu, S. Y.|
Chen, H. Y.
Chen, K. N.
Department of Electronics Engineering and Institute of Electronics
|Abstract:||Diffusion behaviors of co-sputtered metals during thermal treatments were investigated, where these co-sputtered metals can be used as bonding materials for 3D Interconnects. In this paper, we report the diffusion behaviors and discuss the diffusion mechanisms of co-sputtered metals before and after annealing. Atom and vacancy volume, vacancy formation energy, and activation energy are proposed to explain the diffusion direction and diffusion rate among different co-sputtered metals. Based on the excellent bonding performance of this method, Cu/metal co-sputtering bonding is considered as a potential candidate for advanced bonding technology.|
|Journal:||JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY|
|Appears in Collections:||Articles|