Title: Diffusion of Co-Sputtered Metals as Bonding Materials for 3D Interconnects During Thermal Treatments
Authors: Hsu, S. Y.
Chen, H. Y.
Chen, K. N.
Department of Electronics Engineering and Institute of Electronics
Keywords: 3D Interconnects;Co-Sputtered;Diffusion;Bonding
Issue Date: 1-Mar-2012
Abstract: Diffusion behaviors of co-sputtered metals during thermal treatments were investigated, where these co-sputtered metals can be used as bonding materials for 3D Interconnects. In this paper, we report the diffusion behaviors and discuss the diffusion mechanisms of co-sputtered metals before and after annealing. Atom and vacancy volume, vacancy formation energy, and activation energy are proposed to explain the diffusion direction and diffusion rate among different co-sputtered metals. Based on the excellent bonding performance of this method, Cu/metal co-sputtering bonding is considered as a potential candidate for advanced bonding technology.
URI: http://hdl.handle.net/11536/16556
ISSN: 1533-4880
Volume: 12
Issue: 3
End Page: 2467
Appears in Collections:Articles