標題: Characterization of SOA in Time Domain and the Improvement Techniques for Using in High-Voltage Integrated Circuits
作者: Chen, Wen-Yi
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrical safe operating area (SOA) (eSOA);power MOSFETs;SOA;snapback;thermal SOA (tSOA)
公開日期: 1-六月-2012
摘要: Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.
URI: http://hdl.handle.net/11536/16523
ISSN: 1530-4388
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 12
Issue: 2
結束頁: 382
顯示於類別:期刊論文


文件中的檔案:

  1. 000305085100026.pdf