標題: A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels
作者: Kuo, Chia-Hao
Lin, Horng-Chih
Lee, I-Che
Cheng, Huang-Chung
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS inverter;poly-Si;system-on-panel (SoP);thin-film transistor (TFT)
公開日期: 1-六月-2012
摘要: A novel complementary metal-oxide-semiconductor inverter with poly-Si nanowire channels is proposed and demonstrated in this letter. The scheme employs a clever tilted-angle implant process in the fabrication; therefore, the formation of the source and drain of both p-channel and n-channel devices requires only one lithographic step. The fabricated n-channel and p-channel field-effect transistors in the inverters show a high ON/OFF current ratio, an acceptable subthreshold swing, and a symmetric driving current, thus enabling the realization of excellent characteristics of the inverters.
URI: http://hdl.handle.net/11536/16497
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 6
結束頁: 833
顯示於類別:期刊論文


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  1. 000305835000031.pdf