標題: Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer
作者: Lee, Dai-Ying
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Oxygen ion migration;resistive random access memory (RRAM);unipolar switching;ZrO2 film
公開日期: 1-Jun-2012
摘要: Oxygen ion migration is an important factor in the formation and rupture of a conducting filament to cause resistive switching (RS) behavior. A calcium oxide-doped zirconium oxide (CaO:ZrO2) oxygen ion conductor buffer layer is introduced between the Ti/ZrO2 interface of conventional Ti/ZrO2/Pt memory devices to improve their unipolar RS properties. Increasing the CaO doping concentration to 2 mol% introduces higher oxygen vacancy content within the CaO:ZrO2 buffer layer, leading to higher oxygen ion conductivity. This allows more oxygen ions to migrate from the oxygen reservoir laterally and vertically across the 2-mol% CaO:ZrO2 buffer layer to the region where the conducting filament forms and ruptures. Therefore, the Ti/2-mol% CaO:ZrO2/ZrO2/Pt device in this letter exhibits good endurance, high-speed switching (50 ns) without soft errors, stubborn nondestructive readout, and stable retention at 150 degrees C.
URI: http://hdl.handle.net/11536/16496
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 6
結束頁: 803
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