標題: Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of < 110 > Uniaxial-Tensile-Strained (001) nMOSFETs
作者: Chen, Ming-Jer
Lee, Wei-Han
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Band structure;effective mass;mechanical stress;metal-oxide-semiconductor field-effect transistors (MOSFETs);mobility;model;simulation;strain;tunneling
公開日期: 1-六月-2012
摘要: We have recently experimentally extracted the piezo-effective-mass coefficients of 2-D electrons via the gate tunneling current of (001) n-channel metal-oxide-semiconductor field-effect transistors under < 110 > uniaxial compressive stress. The results pointed to the existence of a piezo-effective-mass coefficient around the fourfold conduction-band valley in the out-of-plane (quantum confinement) direction. To strengthen this further, here, we provide extra evidence. First, explicit guidelines are drawn to distinguish all the piezo-effective-mass coefficients. Then, a self-consistent strain quantum simulation is executed to fit literature data of both the mobility enhancement and gate current suppression in the uniaxial tensile stress situation. It is found that neglecting the fourfold-valley out-of-plane piezo-effective-mass coefficient, as in existing band structure calculations, only leads to a poor fitting.
URI: http://hdl.handle.net/11536/16495
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 6
結束頁: 755
顯示於類別:期刊論文


文件中的檔案:

  1. 000305835000005.pdf