Title: Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of < 110 > Uniaxial-Tensile-Strained (001) nMOSFETs
Authors: Chen, Ming-Jer
Lee, Wei-Han
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Band structure;effective mass;mechanical stress;metal-oxide-semiconductor field-effect transistors (MOSFETs);mobility;model;simulation;strain;tunneling
Issue Date: 1-Jun-2012
Abstract: We have recently experimentally extracted the piezo-effective-mass coefficients of 2-D electrons via the gate tunneling current of (001) n-channel metal-oxide-semiconductor field-effect transistors under < 110 > uniaxial compressive stress. The results pointed to the existence of a piezo-effective-mass coefficient around the fourfold conduction-band valley in the out-of-plane (quantum confinement) direction. To strengthen this further, here, we provide extra evidence. First, explicit guidelines are drawn to distinguish all the piezo-effective-mass coefficients. Then, a self-consistent strain quantum simulation is executed to fit literature data of both the mobility enhancement and gate current suppression in the uniaxial tensile stress situation. It is found that neglecting the fourfold-valley out-of-plane piezo-effective-mass coefficient, as in existing band structure calculations, only leads to a poor fitting.
URI: http://hdl.handle.net/11536/16495
ISSN: 0741-3106
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 6
End Page: 755
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