|標題:||Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps|
|作者:||Shaposhnikov, A. V.|
Perevalov, T. V.
Gritsenko, V. A.
Cheng, C. H.
Department of Electronics Engineering and Institute of Electronics
|摘要:||Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal alpha-GeO2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO2-Ni structure with good semi-quantitative agreement with experiment. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729589]|
|期刊:||APPLIED PHYSICS LETTERS|