標題: Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps
作者: Shaposhnikov, A. V.
Perevalov, T. V.
Gritsenko, V. A.
Cheng, C. H.
Chin, A.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 11-六月-2012
摘要: Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal alpha-GeO2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO2-Ni structure with good semi-quantitative agreement with experiment. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729589]
URI: http://dx.doi.org/243506
http://hdl.handle.net/11536/16484
ISSN: 0003-6951
DOI: 243506
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Issue: 24
結束頁: 
顯示於類別:期刊論文


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