|Title:||Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing|
|Authors:||Chen, C. H.|
Yan, D. C.
Hsieh, H. H.
Lee, C. P.
Chi, C. C.
Center for Nanoscience and Technology
|Abstract:||Ferromagnetic GeMn was prepared by Mn implantation followed by ion beam-induced epitaxial crystallization annealing. The damage caused by Mn implantation was repaired by subsequent helium ion irradiation. Various structural analyses were performed and Mn ions were found to incorporate uniformly into the Ge lattice without the formation of any secondary phases. The remnant magnetic moment exhibited room temperature ferromagnetism. Anomalous Hall effect and field dependent magnetization were measured at the same time at room temperature indicating spin polarized free carrier transport. Additional measurement using x-ray magnetic circular dichroism also revealed that the carriers were spin-polarized. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729752]|
|Journal:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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