標題: Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing
作者: Chen, C. H.
Niu, H.
Yan, D. C.
Hsieh, H. H.
Lee, C. P.
Chi, C. C.
奈米科技中心
Center for Nanoscience and Technology
公開日期: 11-六月-2012
摘要: Ferromagnetic GeMn was prepared by Mn implantation followed by ion beam-induced epitaxial crystallization annealing. The damage caused by Mn implantation was repaired by subsequent helium ion irradiation. Various structural analyses were performed and Mn ions were found to incorporate uniformly into the Ge lattice without the formation of any secondary phases. The remnant magnetic moment exhibited room temperature ferromagnetism. Anomalous Hall effect and field dependent magnetization were measured at the same time at room temperature indicating spin polarized free carrier transport. Additional measurement using x-ray magnetic circular dichroism also revealed that the carriers were spin-polarized. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729752]
URI: http://dx.doi.org/242412
http://hdl.handle.net/11536/16482
ISSN: 0003-6951
DOI: 242412
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Issue: 24
結束頁: 
顯示於類別:期刊論文


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