標題: A study of phase transition behaviors of chalcogenide layers using in situ alternative-current impedance spectroscopy
作者: Huang, Yin-Hsien
Huang, Yu-Jen
Hsieh, Tsung-Eong
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 15-六月-2012
摘要: Electrical properties of chalcogenide thin films, both pristine Ge2Sb2Te5 (GST) and cerium-doped GST, were investigated by in situ alternative-current (AC) impedance spectroscopy. With the aid of brick-layer model and nano-grain composite model, the roles of grain and grain-boundary on the phase transition of chalcogenides were distinguished and the dominance of grain boundary was observed. Tangent loss behaviors deduced by impedance analysis revealed alien-element doping alters the interfacial polarization and delays the phase-transition rate of GST. Analytical results also illustrated that the in situ AC impedance spectroscopy can be an alternative tool for characterizing the phase-change kinetics of chalcogenides thin films with nano-scale grain sizes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729528]
URI: http://dx.doi.org/123706
http://hdl.handle.net/11536/16479
ISSN: 0021-8979
DOI: 123706
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 111
Issue: 12
結束頁: 
顯示於類別:期刊論文


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