Title: A study of phase transition behaviors of chalcogenide layers using in situ alternative-current impedance spectroscopy
Authors: Huang, Yin-Hsien
Huang, Yu-Jen
Hsieh, Tsung-Eong
Department of Materials Science and Engineering
Issue Date: 15-Jun-2012
Abstract: Electrical properties of chalcogenide thin films, both pristine Ge2Sb2Te5 (GST) and cerium-doped GST, were investigated by in situ alternative-current (AC) impedance spectroscopy. With the aid of brick-layer model and nano-grain composite model, the roles of grain and grain-boundary on the phase transition of chalcogenides were distinguished and the dominance of grain boundary was observed. Tangent loss behaviors deduced by impedance analysis revealed alien-element doping alters the interfacial polarization and delays the phase-transition rate of GST. Analytical results also illustrated that the in situ AC impedance spectroscopy can be an alternative tool for characterizing the phase-change kinetics of chalcogenides thin films with nano-scale grain sizes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729528]
URI: http://dx.doi.org/123706
ISSN: 0021-8979
DOI: 123706
Volume: 111
Issue: 12
End Page: 
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