標題: Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness
作者: Huang, Huei-Min
Chang, Chiao-Yun
Lan, Yu-Pin
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 25-六月-2012
摘要: The defect-induced carrier localization in nonpolar a-plane (Al,Ga)N/GaN multiple quantum wells (MQWs) structures with different well thickness have been investigated. A strong variation of temperature-dependent photoluminescence peak energy was observed and attributed to the existence of the localized states. The degree of carrier localization in these defect-induced states was more prominent in the case of MQWs with the wider well width. In addition, the ultraviolet light emission efficiency revealed a 3-fold enhancement with increasing the well width from 1.6 nm to 7.3 nm, due to the strong carrier localization generated from the quantum-wire-like features formed by the intersection between basal stacking faults and quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730438]
URI: http://dx.doi.org/261901
http://hdl.handle.net/11536/16471
ISSN: 0003-6951
DOI: 261901
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Issue: 26
結束頁: 
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