標題: High-stability oxygen sensor based on amorphous zinc tin oxide thin film transistor
作者: Chen, Yu-Chun
Chang, Ting-Chang
Li, Hung-Wei
Chung, Wan-Fang
Wu, Chang-Pei
Chen, Shih-Ching
Lu, Jin
Chen, Yi-Hsien
Tai, Ya-Hsiang
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 25-六月-2012
摘要: This research presents a sol-gel derived zinc tin oxide thin film transistor (TFT) as a high-stability oxygen sensor. Due to its high sensitivity, oxygen has been traditionally regarded as having a negative influence on the electrical characteristics of zinc-based TFTs; however, TFTs can also act as an oxygen sensor. After illumination with visible light in oxygen-rich ambient, a significant increase in drain current of nearly 10 4 times occurs with fixed gate and drain voltages. It is expected that an optimized method of illumination can help to reset the electrical characteristics or distinguish the on/off state of this reliable oxygen sensor. (C) 2012 American Institute of Physics. [ http://dx.doi.org/10.1063/1.4731773]
URI: http://dx.doi.org/262908
http://hdl.handle.net/11536/16470
ISSN: 0003-6951
DOI: 262908
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Issue: 26
結束頁: 
顯示於類別:期刊論文


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