標題: Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars
作者: Chang, J. -R.
Chang, S. -P.
Li, Y. -J.
Cheng, Y. -J.
Sou, K. -P.
Huang, J. -K.
Kuo, H. -C.
Chang, C. -Y.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 25-六月-2012
摘要: Core-shell InGaN/GaN multiple quantum wells (MQWs) on GaN nanopillars were fabricated by top-down etching followed by epitaxial regrowth. The regrowth formed hexagonal sidewalls and pyramids on the nanopillars. The cathodoluminescence of MQWs blue shifts as the location moves from top to bottom on both the pillar sidewalls and pyramid facets, covering a spectral linewidth of about 100 nm. The MQWs on the pillar sidewalls have a higher InN fraction than those on the pyramid facets. The photoluminescent wavelength is stable over two orders of carrier density change due to the smaller quantum confined Stark effect on the nanopillar facets. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731629]
URI: http://dx.doi.org/261103
http://hdl.handle.net/11536/16469
ISSN: 0003-6951
DOI: 261103
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Issue: 26
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000305831500003.pdf