標題: Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
作者: Tran, Binh-Tinh
Chang, Edward-Yi
Trinh, Hai-Dang
Lee, Ching-Ting
Sahoo, Kartika Chandra
Lin, Kung-Liang
Huang, Man-Chi
Yu, Hung-Wei
Luong, Tien-Tung
Chung, Chen-Chen
Nguyen, Chi-Lang
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: MOCVD;InGaN;Si;Solar cell;ITO
公開日期: 1-七月-2012
摘要: Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V-oc) of 1.52 V and a short-circuit current density (J(sc)) of 8.68 mA/cm(2) with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V-oc and In content in the InxGa1-xN alloys for this type of solar cell was also derived. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11536/16462
ISSN: 0927-0248
期刊: SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume: 102
Issue: 
結束頁: 208
顯示於類別:期刊論文


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