Title: Effects of Mechanical Strains on the Characteristics of Top-Gate Staggered a-IGZO Thin-Film Transistors Fabricated on Polyimide-Based Nanocomposite Substrates
Authors: Lin, Chang-Yu
Chien, Chih-Wei
Wu, Chung-Chih
Yeh, Yung-Hui
Cheng, Chun-Cheng
Lai, Chih-Ming
Yu, Ming-Jiue
Leu, Chyi-Ming
Lee, Tzong-Ming
交大名義發表
National Chiao Tung University
Keywords: In-Ga-Zn-O;mechanical strain;nanocomposite;polyimide (PI);thin-film transistors (TFTs)
Issue Date: 1-Jul-2012
Abstract: In this paper, we had successfully implemented flexible top-gate staggered amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) on colorless and transparent polyimide (PI)-based nanocomposite substrates using fully lithographic and etching processes that are compatible with existing TFT mass fabrication technologies. The use of the selectively coated release layer between the nanocomposite PI film and the glass carrier ensured smooth debonding of the plastic substrate after TFT fabrication. The TFTs showed decent performances (with mobility > 10 cm(2)/V . s) either as fabricated or as debonded from the carrier glass. By bending the devices to different radii of curvature (from a flat state to an outward bending radius of 5 mm), influences of mechanical strains on the characteristics of flexible a-IGZO TFTs were also investigated. In general, the mobility of the flexible a-IGZO TFT increased with the tensile strain, whereas the threshold voltage decreased with the tensile strain. The variation of the mobility in a-IGZO TFTs versus the strain appeared smaller than those observed for amorphous silicon TFTs.
URI: http://hdl.handle.net/11536/16460
ISSN: 0018-9383
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 59
Issue: 7
End Page: 1956
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