標題: Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
作者: Yu, Chang-Hung
Wu, Yu-Sheng
Hu, Vita Pi-Ho
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Backgate bias;germanium-on-insulator (GeOI);quantum confinement (QC);ultra-thin body (UTB)
公開日期: 1-七月-2012
摘要: This paper investigates the impact of quantum confinement (QC) on the backgate-bias (V-bg) modulated subthreshold and threshold-voltage (V-th) characteristics of ultra-thin-body germanium-on-insulator (UTB GeOI) MOSFETs using an analytical solution of the Schrodinger equation verified with TCAD numerical simulation. Our study indicates that the QC effect reduces the sensitivity of the subthreshold swing to V-bg. In addition, the sensitivity of V-th to V-bg can be enhanced by the QC effect particularly for electrostatically well-behaved UTB MOSFETs with triangular potential well. Aside from that, the sensitivity of V-th roll-off to V-bg is reduced by the QC effect. Since Ge and Si channels exhibit different degrees of QC due to different quantization effective mass, the impact of QC has to be considered when one-to-one comparisons between GeOI and SOI MOSFETs regarding the backgate-bias modulated threshold-voltage and subthreshold characteristics are made. Our study may provide insights for multi-V-th device/circuit designs using advanced UTB GeOI technologies.
URI: http://hdl.handle.net/11536/16459
ISSN: 0018-9383
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 59
Issue: 7
結束頁: 1851
顯示於類別:期刊論文


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  1. 000305622800005.pdf