Title: Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications
Authors: Hsu, Sheng-Yao
Chen, Hsiao-Yu
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Adhesion layer;metal bonding;3-D integration
Issue Date: 1-Jul-2012
Abstract: A novel 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. In addition, cosputtered Cu/Ti bonding exhibits good electrical performance as well as high resistance to multiple current stressing. With the advantages of fabrication efficiency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in 3-D integration.
URI: http://hdl.handle.net/11536/16446
ISSN: 0741-3106
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 7
End Page: 1048
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